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Ushio is proud to announce the unveiling of a new 660nm red laser diode which produces an output power of 200mW CW / 400mW pulsed. The series is available with three different types of connector (CC, AC, or FN) to be designated as HL65221DG, HL65222DG, and HL65223DG respectively.
With this latest development, engineers at Japan-based Ushio Opto-Semiconductors, Inc. have achieved unprecedented precision control for industrial sensing, measurement, medical, and biological applications. The aluminium gallium indium phosphide (AlGaInP) structured lasers have a narrow stripe with low loss waveguide...
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